Ultra-Low Power Stress-Optic Phase-Shifters in 400 nm Thick Silicon Nitride Using Thin Film Sputtered-PZT
“Ultra-Low Power Stress-Optic Phase-Shifters in 400 nm Thick Silicon Nitride Using Thin Film Sputtered-PZT”, CLEO PR 2024. Incheon, Korea, Accepted .
,