CORE FACULTY

Education
• PhD, Electrical Engineering, 2013, The Ohio State University, Columbus, USA.
• B. E. (Hons), Electrical & Electronics Engineering, 2008, Birla Institute of Technology and Science (BITS), Pilani.

Experience
• Assistant Professor, IISc, Bangalore, August 2014 – present.
• Postdoctoral researcher, The Ohio State University, Columbus, USA, October 2013 – July 2014.

Research Interests
• Wide band gap materials and devices, including Gallium nitride based transistors for power switching and RF applications
• Deep-UV photodetectors based on III-nitrides, gallium oxide and their heterojunctions
• 2D layered materials for memristive and synaptic devices

Research Area
Wide band gap devices for microwave and power electronics

Recent Publications

• Baby, R., Roy, S. K., Tripathy, S., Muralidharan, R., Basu, K., Raghavan, S., & Nath, D. N. (2024). Fabrication and Switching Performance of 8 A–500 VD‐Mode GaN MISHEMTs.physica status solidi (a), 221(13), 2300518.

• Sahoo, J., Vijayakumar, P., Saquib, T., Suganya, M., Ganesamoorthy, S., Muralidharan, R., & Nath, D. N. (2024). Study of optical float-zone grown gallium oxide Schottky barrier diode. Semiconductor Science and Technology, 39(5), 055009.

• Meneghini, M., Ng, G. I., Medjdoub, F., Buffolo, M., Warnock, S., Nath, D., … & Shen, S. C. (2024). Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications. IEEE Transactions on Electron Devices, 71(3), 1340-1343.

• Saquib, T., Akyol, F., Ozden, H., Somaiah, N., Sahoo, J., Muralidharan, R., & Nath, D. N. (2024). Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction. Journal of Applied Physics, 135(6).

• Muazzam, U. U., Muralidharan, R., Raghavan, S., & Nath, D. N. (2023). Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD. Optical Materials, 145, 114373.
  https://doi.org/10.1016/j.optmat.2023.114373

Key Publications

• Singh Pratiyush, Anamika, et al. “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector.” Applied Physics Letters 110.22 (2017).

• Baby, Rijo, et al. “8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing.” Microelectronic Engineering 282 (2023): 112085.

• Gowrisankar, Aniruddhan, et al. “Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications.” IEEE Transactions on Electron Devices 70.4 (2023): 1622-1627.