Students
Nayana Remesh
PhD (2016)
Email: nayana@iisc.ac.in
Group Webpage: https://www.cense.iisc.ac.in/vasugroup/
Faculty Advisors: Prof. Srinivasan Raghavan, CeNSE.
Linkedin Profile: https://www.linkedin.com/in/nayana-remesh-0737ba7a/?originalSubdomain=in
Education
• B.E., ECE, (2010), Government Engineering College, Idukki, Kerala, India.
• M.Tech., VLSI- Design, (2014), Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, India.
Experience
• Project Associate, CeNSE, IISc, Bangalore, India, (Aug 2015 – Jul 2016).
• Research Assistant, IIT Bombay, Mumbai, India, (Jul 2014 – Jul 2015).
• Electronics Engineer, A S Moloobhoy & Sons, Mumbai, India, (Sep 2010 – Oct 2011).
Publications
• S. Dev, Nayana Remesh, Y. Rawal, P. P. Manik, B. Wood, and S. Lodha, “Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer”, Applied Physics Letters, 108 (10), 103507 (2016).
• Nayana Remesh, Reena Monica “DESIGN OF LOW POWER BAUGH WOOLEY MULTIPLIER USING CNTFET”, (Published in IASTER’s International Journal of Research in Electronics & Communication Engineering, Volume 1, Issue 2, October-December, 2013)
Conference and Seminars
• P. P. Manik, S. Dev, Nayana Remesh, Y. Rawal, S. Khopkar, S. Lodha, “Ge n-channel FinFET Performance Enhancement Using Low Work Function Metal-Interfacial Layer-Ge Contacts” accepted at VLSI-TSA, Hsinchu, Taiwan, April 2017.
• Nayana Remesh, S. Dev, Y. Rawal, s. Khopkar, P. P. Manik, B. Wood, A. Brand, S. Lodha, “Contact barrier height and resistivity reduction using low work-function metal (Yb)-interfacial layer-semiconductor contacts on n-type Si and Ge” DRC 2015.