Students
Ankit Rao
PhD (2016)
Room No: FF-12
Phone: 22933181 (212)
Group Webpage: https://www.cense.iisc.ac.in/vasugroup/
Faculty Advisors: Prof. Srinivasan Raghavan, CeNSE
Education
• B.E. (Hons) Chemical Engineering, Birla Institute of Technology and Sciences (BITS), Pilani, RJ. (2011-2016)
• M.Sc. (Hons.) Economics, Birla Institute of Technology and Sciences (BITS), Pilani, RJ. (2011-2016)
Research Area
Devices on 2D Materials; low-dimensional-semiconductors
Publications
• Rao, Ankit, et al. “Investigating the effect of dopant type and concentration on TiO2 powder microstructure via rietveld analysis.” Journal of Physics and Chemistry of Solids 113 (2018): 164-176.
• Vijay Singh, Ankit Rao, Anamika Tiwari, Padarthi Yashwanth, Manohar Lal, Uma Dubey, Shampa Aich, and Banasri Roy. “Study on the effects of Cl and F doping in TiO2 powder synthesized by a sol-gel route for biomedical applications.” Journal of Physics and Chemistry of Solids 134 (2019): 262-272
Conference and Seminars
• Ankit Rao, Srinivasan Raghavan- ‘Substrate Engineered Growth of Large Area Hexagonal Boron Nitride (h-BN) via Chemical Vapor Deposition’, 61st Electronic Materials Conference, Ann Arbor, 2019. (Oral Presentation)
• Ankit Rao, Srinivasan Raghavan- ‘Thermodynamically Controlled Large Area CVD Growth of Hexagonal Boron Nitride (h-BN)’, 10th International Conference on Materials for Advanced Technologies (ICMAT), Singapore, 2019. (Oral Presentation)