Alumni

Krishna Bharadwaj B

Krishna Bharadwaj B

PhD (2016)

Email: krishbharadwaj@gmail.com 
Phone: +91 9242150120
Linkedin Profile: Krishna Bharadwaj B

Current Position
Assistant Professor, Department of Electrical Engineering, IIT Kanpur.

Education
• B.E., 2008, Electrical Engineering, PSG College of Technology, Coimbatore, India.
• Ph.D. 2016.

Experience
• Hardware Design Engineer, Cisco Systems Inc. Bangalore. India, (2008 – 2010).

Publications
• Sindhu Seethamaraju, Shishir Kumar, B. Krishna Bharadwaj, Manish Jain, Srinivasan Raghavan, Praveen Kumar Million Fold Reduction in Polymer Moisture Permeability by a Graphene Monolayer 2016, ACS Nano, Just Accepted.

• Krishna Bharadwaj, Digbijoy Nath, Rudra Pratap and Srinivasan Raghavan, Making Consistent Contacts to Graphene: Effect of Architecture and Growth Induced Defects 2016, Nanotechnology, Volume 27, Number 20.

• B Krishna Bharadwaj, Hareesh Chandrashekar, Digbijoy Nath, Rudra Pratap and Srinivasan Raghavan, Intrinsic Limits of Channel Transport Hysteresis in Graphene-SiO 2 Interface and Its Dependence on Graphene Defect Density 2016 Journal of Physics D: Applied Physics, Just Accepted.

• Swathi Suran, Krishna Bharadwaj, Srinivasan Raghavan, and Manoj Varma, Bright-field Nanoscopy: Visualizing Nano-structures with Localized Optical Contrast Using a Conventional Microscope 2016 Nature Scientific Reports, Scientific Reports 6, Article number: 25011.

• Swathi Suran,Krishna Bharadwaj, Srinivasan Raghavan, Manoj M. Varma Seeing the unseen with localized optical contrast 2016, Proc. SPIE 9721, Nanoscale Imaging, Sensing, and Actuation for Biomedical Applications XIII, 97210U.

• Hareesh Chandrasekar,Krishna Bharadwaj, Kranthikumar Vaidyuala, Swathi Suran, Navakanta Bhat, Manoj Varma, and Srinivasan Raghavan Spotting 2D Atomic Layers on Alumium Nitride Thin Films 2015 Nanotechnology, Volume 26, Number 42.

• B. Krishna Bharadwaj, Rudra Pratap and Srinivasan Raghavan Transfer Free Suspended Graphene Devices on Silicon Using Electrodeposited Copper 2014, J. Vac. Sci. Technol. B Volume 32, 010603.